Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole capture-Reference-Cited by-同舟云学术

Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole capture

Published:2022-12 Issue: Volume:139 Page:114801
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Wilhelmer Christoph^ORCID,Waldhoer Dominic,Jech Markus,El-Sayed Al-Moatasem Bellah,Cvitkovich Lukas,Waltl Michael,Grasser Tibor

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference81 articles.

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4. A multi scale modeling approach to non-radiative multi phonon transitions at oxide defects in MOS structures;Schanovsky;J. Comput. Electron.,2012

5. Nature of intrinsic and extrinsic electron trapping in SiO2;El-Sayed;Phys. Rev. B,2014

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