A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs-Reference-Cited by-同舟云学术

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A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs

Published:2024-04-14 Issue: Volume: Page:3B.1-1-3B.1-7
ISSN:
Container-title:2024 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Grasser T.¹,Feil M.¹,Waschneck K.²,Reisinger H.²,Berens J.³,Waldhoer D.¹,Vasilev A.⁴,Waltl M.⁴,Aichinger T.³,Bockstedte M.⁵,Gustin W.²,Pobegen G.⁶

Affiliation:

1. Institute for Microelectronics, TU Wien,Austria

2. Infineon,Germany

3. Infineon,Austria

4. CDL for SDS at the Institute for Microelectronics, TU Wien

5. JKU,Linz,Austria

6. KAI,Austria

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10529283/10529298/10529465.pdf?arnumber=10529465

Reference28 articles.

1. Dynamic Gate Stress Induced Threshold Voltage Drift of Silicon Carbide MOSFET

2. A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation

3. AC-Stress Degradation and Its Anneal in SiC MOSFETs

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gate Switching Instability in Silicon Carbide MOSFETs—Part II: Modeling;IEEE Transactions on Electron Devices;2024-07

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