A DLTS Study on Deep Trench Processing-Induced Trap States in Silicon Photodiodes-Reference-Cited by-同舟云学术

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A DLTS Study on Deep Trench Processing-Induced Trap States in Silicon Photodiodes

Published:2024-06 Issue:2 Volume:24 Page:161-167
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Stampfer Paul¹^ORCID,Roger Frederic¹,Cvitkovich Lukas²,Grasser Tibor²^ORCID,Waltl Michael³^ORCID

Affiliation:

1. ams OSRAM, Premstätten, Austria

2. Institute for Microelectronics, TU Wien, Vienna, Austria

3. Christian Doppler Laboratory for Single-Defect Spectroscopy, Institute for Microelectronics, TU Wien, Vienna, Austria

Funder

Austrian Federal Ministry for Digital and Economic Affairs

National Foundation for Research, Technology and Development

Christian Doppler Forschungsgesellschaft

Technische Universität Wien Bibliothek

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/7298/10566496/10480619.pdf?arnumber=10480619

Reference30 articles.

1. Simulating and Modeling the Influence of Deep Trench Interface Recombination on Si Photodiodes

2. Development of small-sized pixel structures for high-resolution CMOS image sensors

3. Impact of Trap States at Deep Trench Sidewalls on the Responsivity of Island Photodiodes

4. Ultra-Low Noise Defect Probing Instrument for Defect Spectroscopy of MOS Transistors

5. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors

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