Insertion of Hafnium Interlayer to Improve the Thermal Stability of Ultrathin TiSi x in TiSi x /n+-Si Ohmic Contacts
Author:
Affiliation:
1. Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
2. Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
Funder
Youth Innovation Promotion Association of CAS
National Natural Science Foundation of China
opening projects of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences and Guangdong Province Research and Development Program in Key Fields
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9780469/09768105.pdf?arnumber=9768105
Reference51 articles.
1. Retarded C54 transformation and suppressed agglomeration by precipitates in TiSi2 films
2. Dependence of the C49–C54 TiSi2 phase transition temperature on film thickness and Si substrate orientation
3. Effects of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silicon
4. Structural and electrical characteristics of Y2O3 films grown on oxidized Si(100) surface
5. The influence of mixed phases on optical properties of HfO2 thin films prepared by thermal oxidation
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Excellent Improvement of Contact Resistivity and Thermal Stability for High Temperature Process After Silicidation of TiSi2 Through Ta Interlayer for Diffusion Barrier;IEEE Electron Device Letters;2023-07
2. Investigation of ultrathin yttrium silicide for NMOS source/drain contacts;Journal of Materials Science: Materials in Electronics;2023-05
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