Excellent Improvement of Contact Resistivity and Thermal Stability for High Temperature Process After Silicidation of TiSi<sub>2</sub> Through Ta Interlayer for Diffusion Barrier-Reference-Cited by-同舟云学术

Excellent Improvement of Contact Resistivity and Thermal Stability for High Temperature Process After Silicidation of TiSi₂ Through Ta Interlayer for Diffusion Barrier

Published:2023-07 Issue:7 Volume:44 Page:1040-1043
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kim Min-Su¹^ORCID,Hwang Seong-Hyun¹^ORCID,Kim Seung-Hwan²,Kim Jong-Hyun¹,Park Euyjin³^ORCID,Han Kyu-Hyun³,Yu Hyun-Yong³^ORCID

Affiliation:

1. Department of Semiconductor Systems Engineering, Korea University, Seoul, South Korea

2. Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, South Korea

3. School of Electrical Engineering, Korea University, Seoul, South Korea

Funder

Basic Science Research Program within the Ministry of Science, Information and Communication Technology (ICT), and Future Planning through the National Research Foundation of Korea

SK hynix Inc., South Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10168002/10131948.pdf?arnumber=10131948

Reference25 articles.

1. Thermal stability issue of ultrathin Ti-based silicide for its application in prospective DRAM peripheral 3D FinFET transistors

2. A Novel Method to Reduce Specific Contact Resistivity of TiSix/n+-Si Contacts by Employing an In-Situ Steam Generation Oxidation Prior to Ti Silicidation

3. InAs nanowire GAA n-MOSFETs with 12–15 nm diameter

4. Curing of Aged Gate Dielectric by the Self-Heating Effect in MOSFETs

5. Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node

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