InAs nanowire GAA n-MOSFETs with 12–15 nm diameter-Reference-Cited by-同舟云学术

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InAs nanowire GAA n-MOSFETs with 12–15 nm diameter

Published:2016-06 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE Symposium on VLSI Technology
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Author:

Vasen T.,Ramvall P.,Afzalian A.,Thelander C.,Dick K.A.,Holland M.,Doornbos G.,Wang S.W.,Oxland R.,Vellianitis G.,van Dal M.J.H.,Duriez B.,Ramirez J.-R.,Droopad R.,Wernersson L.-E.,Samuelson L.,Chen T.-K.,Yeo Y.-C.,Passlack M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7569798/7573353/07573417.pdf?arnumber=7573417

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