High-quality HfSixOy gate dielectrics fabricated by solid phase interface reaction between physical-vapor-deposited metal–Hf and SiO2 underlayer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1767593
Reference6 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Stable zirconium silicate gate dielectrics deposited directly on silicon
3. La–silicate gate dielectrics fabricated by solid phase reaction between La metal and SiO2 underlayers
4. Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing
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