Nitrogen plasma-induced HfSiON film growth from Hf nanoscale islands on SiO2/Si
Author:
Affiliation:
1. Department of Electric and Electronic Engineering, National Defense Academy, 1-10-20, Hashirimizu, Yokosuka, Kanagawa 239-8686, Japan
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.5037652
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Plasmonic Plasma Deposition Using Nanostructured Materials on Si Substrates;Vacuum and Surface Science;2024-02-10
2. Plasmonic nitriding of graphene on a graphite substrate via gold nanoparticles and NH3/Ar plasma;Journal of Vacuum Science & Technology A;2020-12
3. Enhanced interfacial reaction of precursor and low temperature substrate in HfO2 atomic layer deposition with highly Ar diluted O2 plasma;Journal of Physics Communications;2020-09-01
4. Plasmonic nitridation of SiO2/Si(100) surface covered with gold nanoparticles via nitrogen plasma-produced radicals and light;Journal of Applied Physics;2020-06-28
5. Morphology influence in rapid plasma nitriding of hafnium layer for HfSiON film growth;Journal of Vacuum Science & Technology A;2019-12
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