Effect of Post Deposition Annealing on ALD-ZrO2/SiON Gate Stacks for Advanced CMOS Technology-Reference-Cited by-同舟云学术

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Effect of Post Deposition Annealing on ALD-ZrO2/SiON Gate Stacks for Advanced CMOS Technology

Published:2016-09-23 Issue:17 Volume:75 Page:67-73
ISSN:1938-6737
Container-title:ECS Transactions
language:en
Short-container-title:ECS Transactions

Author:

Gupta R.,Vaid R.

Publisher

The Electrochemical Society

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of post-annealing of tunnel oxide on the electrical characteristics of Pt–Ti/HfO2/TiN/SiON/n-Si capacitor for flash memory applications;Journal of Materials Science: Materials in Electronics;2020-07-30

2. Atomic layer deposition of zirconium oxide thin film on an optical fiber for cladding light strippers;TURKISH JOURNAL OF PHYSICS;2020-02-12

3. Structural and Electrical Characteristics of Oxygen Annealed ALD-ZrO2/SiON Gate Stack for Advanced CMOS Devices;ECS Transactions;2018-06-19

4. Argon Annealed ALD-ZrO 2 /SiON Gate Stack for Advanced CMOS Devices;ECS Transactions;2017-04-26

5. Effects of sol aging on resistive switching behaviors of HfOx resistive memories;Physica B: Condensed Matter;2017-03

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