Interfacial reaction induced strain relaxation in Hf-silicate film on strained Si0.7Ge0.3(001) as a function of annealing temperature-Reference-Cited by-同舟云学术

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Interfacial reaction induced strain relaxation in Hf-silicate film on strained Si0.7Ge0.3(001) as a function of annealing temperature

Published:2013-08-28 Issue:11 Volume:210 Page:2499-2502
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kim Dae-Kyoung¹,Kang Yu Seon¹,Kang Hang Kyu¹,Cho Mann-Ho¹,Ko Dae Hong²,Lee Sun Young³,Kim Dong Chan³,Kim Chang Soo⁴,Seo Jung Hye⁵

Affiliation:

1. Institute of Physics and Applied Physics; Yonsei University; Seoul 120-749 Korea

2. Department of Material Science and Engineering; Yonsei University; Seoul 120-749 Korea

3. Process Development Team; Semiconductor R&D Center, Samsung Electronics Co., Ltd.; Yongin 446-711 Korea

4. Korea Research Institute of Standards and Science; Daejeon 305-540 Korea

5. Division of Material Science; Korea Basic Science Institute; Daejeon 305-540 Korea

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

2. Hafnium and zirconium silicates for advanced gate dielectrics

3. Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films

4. Materials characterization of ZrO2–SiO2 and HfO2–SiO2 binary oxides deposited by chemical solution deposition

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