Control of the interfacial reaction in HfO2 on Si-passivated GaAs-Reference-Cited by-同舟云学术

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Control of the interfacial reaction in HfO2 on Si-passivated GaAs

Published:2013-10 Issue: Volume:283 Page:375-381
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Park Sang Han,Kang Yu Seon,Chae Jimin,Kim Hyo Jin,Cho Mann-Ho,Ko Dae-Hong,Byun Young-Chul,Kim Hyoungsub,Cho Sang Wan,Kim Chung Yi,Seo Jung-Hye

Funder

Industry-Academy joint research program

Next-generation substrate technology for high performance semiconductor devices

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference28 articles.

1. Analysis of native oxide films and oxide-substrate reactions on III–V semiconductors using thermochemical phase diagrams

2. HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition

3. Band Structure and Electron Transport of GaAs

4. Defect reduction of GaAs epitaxy on Si (001) using selective aspect ratio trapping

5. Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic-layer-deposited Al 2 O 3 and HfO 2 on InAlAs: A comparative study of interfacial and electrical characteristics;Chinese Physics B;2016-09-23

2. Ferromagnetic HfO2/Si/GaAs interface for spin-polarimetry applications;Applied Physics Letters;2015-09-21

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