Ferromagnetic HfO2/Si/GaAs interface for spin-polarimetry applications-Reference-Cited by-同舟云学术

Ferromagnetic HfO2/Si/GaAs interface for spin-polarimetry applications

Published:2015-09-21 Issue:12 Volume:107 Page:123506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tereshchenko O. E.¹²,Golyashov V. A.¹²^ORCID,Eremeev S. V.³⁴,Maurin I.⁵,Bakulin A. V.³,Kulkova S. E.³⁴,Aksenov M. S.¹,Preobrazhenskii V. V.¹,Putyato M. A.¹,Semyagin B. R.¹,Dmitriev D. V.¹,Toropov A. I.¹,Gutakovskii A. K.¹²^ORCID,Khandarkhaeva S. E.²,Prosvirin I. P.²⁶^ORCID,Kalinkin A. V.⁶,Bukhtiyarov V. I.²⁶,Latyshev A. V.¹²

Affiliation:

1. Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090, Russian Federation

2. Novosibirsk State University, Novosibirsk 630090, Russian Federation

3. Institute of Strength Physics and Materials Science, 634021 Tomsk, Russian Federation

4. Tomsk State University, 634050 Tomsk, Russian Federation

5. Laboratoire de Physique de la Matière Condensée, Ecole Polytechnique - CNRS, 91128 Palaiseau Cedex, France

6. Boreskov Institute of Catalysis, Novosibirsk 630090, Russian Federation

Funder

Ministry of Education and Science of the Russian Federation

Publisher

AIP Publishing

Subject