Control of Spin Precession in a Spin-Injected Field Effect Transistor

Author:

Koo Hyun Cheol1,Kwon Jae Hyun1,Eom Jonghwa12,Chang Joonyeon1,Han Suk Hee1,Johnson Mark3

Affiliation:

1. Center for Spintronics Research, Korea Institute of Science and Technology (KIST), 39-1 Hawolgok-dong, Seongbuk-gu, Seoul, 136-791, Korea.

2. Department of Physics, Sejong University, 98 Gunja-dong, Gwangjin-gu, Seoul, 143-747, Korea.

3. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375, USA.

Abstract

Transistors Switch onto Spin Using the spin of an electron in addition to, or instead of, the charge properties is believed to have many benefits in terms of speed, power-cost, and integration density over conventional electronic circuits. At the heart of the field of spintronics has been a proposed spin-analog of the electronic transistor, the spin field effect transistor. Koo et al. (p. 1515 ) demonstrate the injection and detection of spin between two ferromagnetic contacts and show how the magnitude of the spin-current between the source and drain contacts can be controlled by a voltage applied to a gate. The results present an experimental realization of the concepts described for the spin-transistor.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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