Atomic-layer-deposited Al 2 O 3 and HfO 2 on InAlAs: A comparative study of interfacial and electrical characteristics
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/25/10/108101/pdf
Reference18 articles.
1. High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm
2. Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz
3. Enhancement-Mode Buried-Channel $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As/In}_{0.52}\hbox{Al}_{0.48}\hbox{As}$ MOSFETs With High- $\kappa$ Gate Dielectrics
4. Control of the interfacial reaction in HfO2 on Si-passivated GaAs
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1. Optical properties of native (anodic) layer on the InAlAs surface of different morphology;Thin Solid Films;2021-06
2. Impact of High-K and Gate-to-Drain Spacing in InGaAs/InAs/InGaAs-based DG-MOS-HEMT for Low-leakage and High-frequency Applications;IETE Journal of Research;2021-05-26
3. Study of the Density of Interface States at the Insulator/In0.52Al0.48As Interface;Technical Physics Letters;2020-05
4. Investigation of impact of gate underlap/overlap on the analog/RF performance of composite channel double gate MOSFETs;Journal of Vacuum Science & Technology B;2019-11
5. Anodic layer formation on the InAlAs surface in Townsend gas-discharge plasma;Materials Science in Semiconductor Processing;2019-11
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