Investigation of impact of gate underlap/overlap on the analog/RF performance of composite channel double gate MOSFETs

Author:

Ajayan J.1,Nirmal D.2,Kurian Dheena3,Mohankumar P.1,Arivazhagan L.2,Augustine Fletcher A. S.2,Subash T. D.4,Saravanan M.1

Affiliation:

1. Department of Electronics and Communication Engineering, SNS College of Technology, Coimbatore 641035, Tamilnadu, India

2. Department of Electronics and Communication Engineering, Karunya Institute of Technology and Sciences, Coimbatore 641114, Tamilnadu, India

3. Department of Electronics and Communication Engineering, Kerala Technological University, Trivandrum 695016, Kerala, India

4. Department of Electronics and Communication Engineering, Mangalam College of Engineering, Ettumanoor 686631, Kerala, India

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Analog/RF Performance Evaluation of InAs-InGaAs-GAA-TFET;2023 International Conference on Recent Advances in Electrical, Electronics, Ubiquitous Communication, and Computational Intelligence (RAEEUCCI);2023-04-19

2. Analytical Modelling of Dopingless (DL) Impact Ionization MOSFET (IMOS);Silicon;2022-04-13

3. Investigation on the Effect of Gate Overlap/Underlap on the 1T DRAM Cell;2022 International Conference on Electronics, Information, and Communication (ICEIC);2022-02-06

4. Study of Performance of High-Speed Low-Power Differential Input Based Dynamic Comparator Using 22 nm CMOS Technology;2020 6th International Conference on Advanced Computing and Communication Systems (ICACCS);2020-03

5. III-V Nanoscale Quantum-Well Field-Effect Transistors for Future High-Performance and Low-Power Logic Applications;Energy Systems in Electrical Engineering;2020

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