III-V Nanoscale Quantum-Well Field-Effect Transistors for Future High-Performance and Low-Power Logic Applications
Author:
Publisher
Springer Singapore
Link
http://link.springer.com/content/pdf/10.1007/978-981-15-7937-0_7
Reference55 articles.
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3. Ajayan J, Nirmal D (2016b) 20 nm high performance enhancement mode InP HEMT with heavily doped S/D regions for future THz application. Superlattices Microstruct 100:526–534
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5. Ajayan J, Nirmal D (2017b) 20-nm enhancement-mode metamorphic GaAs HEMT with highly doped InGaAs source/drain regions for high-frequency applications. Int J Electron 104:504–512
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