22 nm In${}_{0.75}{{\rm{Ga}}}_{0.25}$As channel-based HEMTs on InP/GaAs substrates for future THz applications-Reference-Cited by-同舟云学术

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22 nm In${}_{0.75}{{\rm{Ga}}}_{0.25}$As channel-based HEMTs on InP/GaAs substrates for future THz applications

Published:2017-04 Issue:4 Volume:38 Page:044001
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Ajayan J.,Nirmal D.

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/38/i=4/a=044001/pdf

Reference55 articles.

1. THz Monolithic Integrated Circuits Using InP High Electron Mobility Transistors

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive characterization of a high‐performance double heterojunction InGaAs pHEMT for linear power‐efficient amplifiers applications;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-07

2. Electrostatic, linearity and analogue/RF performance analysis of single heterojunction GaAs HEMT;Journal of Materials Science: Materials in Electronics;2024-01

3. Design and Performance Analysis of InSb/InGaAs/InAlAs High Electron Mobility Transistor for High-Frequency Applications;Proceedings of Congress on Control, Robotics, and Mechatronics;2023-11-10

4. Effect of InxAl1-xAs graded buffer materials on pseudomorphic InP HEMT;Frontiers in Materials;2022-08-25

5. Thermal annealing behavior of InP-based HEMT damaged by proton irradiation;Solid-State Electronics;2022-07

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