Enhancement-Mode Buried-Channel $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As/In}_{0.52}\hbox{Al}_{0.48}\hbox{As}$ MOSFETs With High- $\kappa$ Gate Dielectrics-Reference-Cited by-同舟云学术

Enhancement-Mode Buried-Channel $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As/In}_{0.52}\hbox{Al}_{0.48}\hbox{As}$ MOSFETs With High- $\kappa$ Gate Dielectrics

Published:2007-06 Issue:6 Volume:28 Page:473-475
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Sun Yanning,Kiewra E. W.,Koester S. J.,Ruiz N.,Callegari A.,Fogel K. E.,Sadana D. K.,Fompeyrine J.,Webb D. J.,Locquet J.-P.,Sousa M.,Germann R.,Shiu K. T.,Forrest S. R.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4212164/04212190.pdf?arnumber=4212190

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