Effects of boron dopants of Si (001) substrates on formation of Ge layers by sputter epitaxy method
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4826501
Reference19 articles.
1. Very high hole mobilities in modulation-doped Ge quantum wells grown by low-energy plasma enhanced chemical vapor deposition
2. Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001)p-type modulation-doped heterostructures
3. Ultrahigh room-temperature hole Hall and effective mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures
4. Strained Si/strained Ge dual-channel heterostructures on relaxed Si0.5Ge0.5 for symmetric mobility p-type and n-type metal-oxide-semiconductor field-effect transistors
5. Strain-Relaxed Si1-xGexand Strained Si Grown by Sputter Epitaxy
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1. Impact of Sn incorporation on sputter epitaxy of GeSn;Applied Physics Express;2023-09-01
2. Sn distribution in Ge/GeSn heterostructures formed by sputter epitaxy method;Journal of Crystal Growth;2023-02
3. Crystallization of GeSn thin films deposited on Ge(100) substrate by magnetron sputtering;Materials Science in Semiconductor Processing;2018-12
4. Epitaxial growth of Ge thin film on Si (001) by DC magnetron sputtering;Materials Science in Semiconductor Processing;2017-11
5. Crystallinity control of SiC grown on Si by sputtering method;Journal of Crystal Growth;2017-04
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