Strained Si/strained Ge dual-channel heterostructures on relaxed Si0.5Ge0.5 for symmetric mobility p-type and n-type metal-oxide-semiconductor field-effect transistors-Reference-Cited by-同舟云学术

Strained Si/strained Ge dual-channel heterostructures on relaxed Si0.5Ge0.5 for symmetric mobility p-type and n-type metal-oxide-semiconductor field-effect transistors

Published:2003-11-17 Issue:20 Volume:83 Page:4202-4204
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee Minjoo L.,Fitzgerald Eugene A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1627469

Reference15 articles.

1. Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si

2. Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates

3. Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors

4. High hole mobility in Si0.17Ge0.83 channel metal–oxide–semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition

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