High hole mobility in Si0.17Ge0.83 channel metal–oxide–semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126821
Reference12 articles.
1. On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration
2. SiGe heterostructure CMOS circuits and applications
3. Carrier mobilities in modulation doped Si1−xGex heterostructures with respect to FET applications
4. High hole mobility in SiGe alloys for device applications
5. High performance 0.25 [micro sign]m p-type Ge/SiGe MODFETs
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