High performance 0.25 [micro sign]m p-type Ge/SiGe MODFETs
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19981284?crawler=true&mimetype=application/pdf
Reference6 articles.
1. DC and RF performance of 0.25 μm p-type SiGe MODFET
2. A 70-GHz f/sub T/ low operating bias self-aligned p-type SiGe MODFET
3. Determination of electrical transport properties using a novel magnetic field‐dependent Hall technique
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