PdGe contact fabrication on Se-doped Ge-Reference-Cited by-同舟云学术

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PdGe contact fabrication on Se-doped Ge

Published:2017-10 Issue: Volume:139 Page:104-107
ISSN:1359-6462
Container-title:Scripta Materialia
language:en
Short-container-title:Scripta Materialia

Author:

Descoins M.,Perrin Toinin J.,Zhiou S.,Hoummada K.,Bertoglio M.,Ma R.,Chow L.,Narducci D.,Portavoce A.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,Mechanics of Materials,Metals and Alloys,Mechanical Engineering

Reference50 articles.

1. Materials aspects, electrical performance, and scalability of Ni silicide towards sub-0.13 μm technologies

2. Ni- and Co-based silicides for advanced CMOS applications

3. Towards implementation of a nickel silicide process for CMOS technologies

4. High-κ gate dielectrics: Current status and materials properties considerations

5. Structural and electrical characteristics of ALD-HfO2/n-Si gate stack with SiON interfacial layer for advanced CMOS technology

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ge(Sn) growth on Si(001) by magnetron sputtering;Materials Today Communications;2021-03

2. Interface Control Processes for Ni/Ge and Pd/Ge Schottky and Ohmic Contact Fabrication: Part Two;Advanced Material and Device Applications with Germanium;2018-10-03

3. PdGe contact fabrication on Ga-doped Ge: Influence of implantation-mediated defects;Scripta Materialia;2018-06

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