PdGe contact fabrication on Ga-doped Ge: Influence of implantation-mediated defects-Reference-Cited by-同舟云学术

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PdGe contact fabrication on Ga-doped Ge: Influence of implantation-mediated defects

Published:2018-06 Issue: Volume:150 Page:66-69
ISSN:1359-6462
Container-title:Scripta Materialia
language:en
Short-container-title:Scripta Materialia

Author:

Luo T.,Perrin Toinin J.,Descoins M.,Hoummada K.,Bertoglio M.,Chow L.,Narducci D.,Portavoce A.

Funder

French National Agency for Research

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,Mechanics of Materials,Metals and Alloys,Mechanical Engineering

Reference38 articles.

1. Silicon–Germanium (SiGe) Nanostructures;Washio,2011

2. High mobility CMOS technologies using III–V/Ge channels on Si platform

3. Roadmap on silicon photonics

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Coupling Secondary Ion Mass Spectrometry and Atom Probe Tomography for Atomic Diffusion and Segregation Measurements;Microscopy and Microanalysis;2019-01-30

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