High mobility CMOS technologies using III–V/Ge channels on Si platform-Reference-Cited by-同舟云学术

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High mobility CMOS technologies using III–V/Ge channels on Si platform

Published:2013-10 Issue: Volume:88 Page:2-8
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Takagi S.,Kim S.-H.,Yokoyama M.,Zhang R.,Taoka N.,Urabe Y.,Yasuda T.,Yamada H.,Ichikawa O.,Fukuhara N.,Hata M.,Takenaka M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference59 articles.

1. Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

2. International Technology Roadmap for Semiconductors (ITRS); 2010. .

3. Device structures and carrier transport properties of advanced CMOS using high mobility channels

4. Takagi S, Takenaka M. In: IEEE symp on VLSI technol; 2010. p. 147.

5. Low-Voltage Tunnel Transistors for Beyond CMOS Logic

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