Materials aspects, electrical performance, and scalability of Ni silicide towards sub-0.13 μm technologies-Reference-Cited by-同舟云学术

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Materials aspects, electrical performance, and scalability of Ni silicide towards sub-0.13 μm technologies

Published:2001 Issue:6 Volume:19 Page:2026
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Lauwers Anne,Steegen An,de Potter Muriel,Lindsay Richard,Satta Alessandra,Bender Hugo,Maex K.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 127 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A comprehensive atomistic picture of the as-deposited Ni-Si interface before thermal silicidation process;Applied Surface Science;2023-09

2. Implementation of Ambipolar Polysilicon Thin-Film Transistors with Nickel Silicide Schottky Junctions by Low-Thermal-Budget Microwave Annealing;Nanomaterials;2022-02-13

3. NiSi2/p-Si Schottky Junction Photocathode with a High-Quality Epitaxial Interface for Efficient Hydrogen Evolution;ACS Applied Energy Materials;2021-09-29

4. Three-dimensional imaging of carbon clusters in thermally stable nickel silicides by carbon pre-implantation;Applied Surface Science;2021-02

5. Metal Silicidation in Conjunction with Dopant Segregation: A Promising Strategy for Fabricating High-Performance Silicon-Based Photoanodes;ACS Applied Materials & Interfaces;2020-08-11

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