Metal Silicidation in Conjunction with Dopant Segregation: A Promising Strategy for Fabricating High-Performance Silicon-Based Photoanodes-Reference-Cited by-同舟云学术

Metal Silicidation in Conjunction with Dopant Segregation: A Promising Strategy for Fabricating High-Performance Silicon-Based Photoanodes

Published:2020-08-11 Issue:35 Volume:12 Page:39092-39097
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Li Shengyang¹²,She Guangwei¹^ORCID,Xu Jing³,Zhang Shaoyang¹²,Zhang Haoyue¹²,Mu Lixuan¹^ORCID,Ge Chen⁴^ORCID,Jin Kuijuan⁴^ORCID,Luo Jun²³,Shi Wensheng¹²^ORCID

Affiliation:

1. Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China

2. University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, China

3. Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

4. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Funder

Ministry of Science and Technology of the People's Republic of China

Natural Science Foundation of Beijing Municipality

National Natural Science Foundation of China

Chinese Academy of Sciences

Youth Innovation Promotion Association of CAS

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

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