Localized dielectric breakdown and antireflection coating in metal–oxide–semiconductor photoelectrodes-Reference-Cited by-同舟云学术

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Localized dielectric breakdown and antireflection coating in metal–oxide–semiconductor photoelectrodes

Published:2016-11-07 Issue:1 Volume:16 Page:127-131
ISSN:1476-1122
Container-title:Nature Materials
language:en
Short-container-title:Nature Mater

Author:

Ji Li,Hsu Hsien-Yi,Li Xiaohan,Huang Kai,Zhang Ye,Lee Jack C.,Bard Allen J.,Yu Edward T.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://www.nature.com/articles/nmat4801.pdf

Reference30 articles.

1. Boettcher, S. W. et al. Energy-conversion properties of vapor-liquid-solid-grown silicon wire-array photocathodes. Science 327, 185–187 (2010).

2. Reece, S. Y. et al. Wireless solar water splitting using silicon-based semiconductors and earth-abundant catalysts. Science 334, 645–648 (2011).

3. Kenney, M. J. et al. High-performance silicon photoanodes passivated with ultrathin nickel films for water oxidation. Science 342, 836–840 (2013).

4. Hu, S. et al. Amorphous TiO2 coatings stabilize Si, GaAs, and GaP photoanodes for efficient water oxidation. Science 344, 1005–1009 (2014).

5. Esposito, D. V., Levin, I., Moffat, T. P. & Talin, A. A. H2 evolution at Si-based metal–insulator–semiconductor photoelectrodes enhanced by inversion channel charge collection and H spillover. Nat. Mater. 12, 562–568 (2013).

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