Characterization of residual strain in epitaxial Ge layers grown in sub-100 nm width SiO2 trench arrays-Reference-Cited by-同舟云学术

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Characterization of residual strain in epitaxial Ge layers grown in sub-100 nm width SiO2 trench arrays

Published:2015-04 Issue: Volume:580 Page:45-51
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Kim Byongju,Jang Hyunchul,Koo Sangmo,Kim Jeong-Hoon,Kim Dae-Hyun,Min Byoung-Gi,Song Jason S.,Ko Dae-Hong

Funder

IT R&D program of MKE/KEIT

Joint Program for SEC–Yonsei University

R&D Program for Industrial Core Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference36 articles.

1. Gate-self-aligned n-channel and p-channel Germanium MOSFETs;Ransom;IEEE Trans. Electron Devices,1991

2. p-Type Ge-channel MODFET's with high transconductance grown on si substrates;König;IEEE Electron Device Lett.,1993

3. High performance 0.25μm p-type Ge/SiGe MODFETs;Höck;Electron. Lett.,1998

4. Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates;Reinking;Electron. Lett.,1999

5. Extremely high transconductance Ge/Si0.4Ge0.6 p-MODFET's grown by UHV-CVD;Koester;IEEE Electron Device Lett.,2000

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of anisotropic in-plane strain behavior in condensed Si1−x Ge x fin epitaxial layer using X-ray reciprocal space mapping;Japanese Journal of Applied Physics;2019-02-04

2. Effect of Self-Heating on the Electrical Characteristics of Strained Si FinFETs;Journal of Nanoscience and Nanotechnology;2018-03-01

3. Formation of a Ge-rich Si1−x Ge x (x > 0.9) fin epitaxial layer condensed by dry oxidation;Semiconductor Science and Technology;2017-09-29

4. Selective epitaxial growth properties and strain characterization of Si1−x Ge x in SiO2 trench arrays;Journal of the Korean Physical Society;2017-04

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