Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates-Reference-Cited by-同舟云学术

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Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates

Published:2001 Issue:6 Volume:19 Page:2268
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Currie M. T.,Leitz C. W.,Langdo T. A.,Taraschi G.,Fitzgerald E. A.,Antoniadis D. A.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 222 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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4. Fabrication, structural and optical properties of a virtual GeSi template by Ge filling the porous Si prepared by EC etching;Japanese Journal of Applied Physics;2020-04-23

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