Author:
Watanabe Ryosuke,Tsukamoto Takahiro,Kamisako Koichi,Suda Yoshiyuki
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference31 articles.
1. 3C-SiC on Si Hetero-Epitaxial Growth for Electronic and Biomedical Applications
2. Fabrication of inversion-type n-channel MOSFET's using cubic-SiC on Si
3. J. Wan, M.A. Capano, M.R. Melloch, J.A. Cooper, in: Proc. IEEE Lester Eastman Conf. on High Performance Devices, 2002 p. 83.
4. Fabrication and properties of low-temperature (⩽600 °C) processed n-type nanocrystalline SiC/p-type crystalline Si heterojunction diodes
5. C.L Frewin, M. Reyes, J. Register, S.W. Thomas, S.E. Saddow, in: MRS Proc., vol. 1693, 2014 (mrss14-1693-dd05-01).
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