Fabrication and properties of low-temperature (⩽600 °C) processed n-type nanocrystalline SiC/p-type crystalline Si heterojunction diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1480474
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1. Annealed Si1-xCx Emitter Silicon Heterojunction Bipolar Transistors
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2. Selective Fabrication of SiC/Si Heterojunction Diodes by Local Laser Annealing Process for Microwave Circuit Applications;IEEE Journal of the Electron Devices Society;2017-09
3. Crystallinity control of SiC grown on Si by sputtering method;Journal of Crystal Growth;2017-04
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