Photoluminescence and I–V characteristics of the carbonized silicon nanoporous pillar array-Reference-Cited by-同舟云学术

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Photoluminescence and I–V characteristics of the carbonized silicon nanoporous pillar array

Published:2013-05 Issue: Volume:273 Page:233-236
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Wang Haiyan,Xue Renzhong,Li Zijiong,Wang Yongqiang

Funder

National Natural Science Foundation of China

Doctorial Foundation of Zhengzhou University of Light Industry

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference33 articles.

1. Prospects for SiC electronics and sensors;Wright;Materials Today,2008

2. High vacuum chemical vapor deposition of cubic SiC thin films on Si (001) substrates using single source precursor;Boo;Surface and Coatings Technology,2000

3. Low-dimensional SiC nanostructures: fabrication, luminescence, and electrical properties;Fan;Progress in Materials Science,2006

4. Visible light emission from a pn junction of porous silicon and microcrystalline silicon carbide;Futagi;Applied Physics Letters,1993

5. β-SiC/Si heterojunction backward diode;Hwang;IEEE Electron Device Letters,1995

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