N-Si/sub x/C/sub 1-x//P-Si diode fabricated using silane, 1,1,1-trichloroethane and arsine at low temperatures
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/55/3392/00116923.pdf?arnumber=116923
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Reducing the Cut-In Voltage of a Silicon Carbide/p-Silicon Heterojunction Diode Using Femtosecond Laser Ablation;ACS Applied Electronic Materials;2022-12-01
2. Low-temperature processing and properties of nanocrystalline-SiC/crystalline Si heterojunction devices;Solid-State Electronics;2006-02
3. Fabrication and properties of low-temperature (⩽600 °C) processed n-type nanocrystalline SiC/p-type crystalline Si heterojunction diodes;Applied Physics Letters;2002-05-20
4. Analysis of conduction mechanisms in annealed n-Si1−xCx:H/p-crystalline Si heterojunction diodes for different doping concentrations;Journal of Applied Physics;1999-01-15
5. SiC/Si heterojunction diodes fabricated by self-selective and by blanket rapid thermal chemical vapor deposition;IEEE Transactions on Electron Devices;1994-03
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