Epitaxial growth of Ge thin film on Si (001) by DC magnetron sputtering-Reference-Cited by-同舟云学术

Epitaxial growth of Ge thin film on Si (001) by DC magnetron sputtering

Published:2017-11 Issue: Volume:70 Page:3-7
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Otsuka Shintaro,Mori Takahiro,Morita Yukinori,Uchida Noriyuki,Liu Yongxun,O'uchi Shin-ichi,Fuketa Hiroshi,Migita Shinji,Masahara Meishoku,Matsukawa Takashi

Funder

NEDO

AIST

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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4. Effects of Low-Temperature GeSn Buffer Layers on Sn Surface Segregation During GeSn Epitaxial Growth;Electronic Materials Letters;2019-11-14

5. Structural and electrical characterization of epitaxial Ge thin films on Si(001) formed by sputtering;Japanese Journal of Applied Physics;2017-02-09