Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO2 films-Reference-Cited by-同舟云学术

Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO2 films

Published:2021-01-18 Issue:3 Volume:118 Page:032903
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Baumgarten Lutz¹^ORCID,Szyjka Thomas¹^ORCID,Mittmann Terence²^ORCID,Materano Monica²^ORCID,Matveyev Yury³^ORCID,Schlueter Christoph³^ORCID,Mikolajick Thomas²⁴^ORCID,Schroeder Uwe²^ORCID,Müller Martina⁵^ORCID

Affiliation:

1. Forschungszentrum Jülich GmbH, Peter Grünberg Institut (PGI-6), 52425 Jülich, Germany

2. NaMLab gGmbH, Noethnitzer Str.. 64a, 01187 Dresden, Germany

3. Deutsches Elektronen-Synchrotron, Notkestraße 85, 22607 Hamburg, Germany

4. Chair of Nanoelectronic, TU Dresden, 01062 Dresden, Germany

5. Fachbereich Physik, Universität Konstanz, 78457 Konstanz, Germany

Funder

Bundesministerium für Bildung und Forschung

H2020 European Research Council

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0035686

Reference35 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Characterization of HfO 2 -based devices with indication of second order memristor effects

3. HfO2-based memristors for neuromorphic applications

4. Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering

5. Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

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