Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering-Reference-Cited by-同舟云学术

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Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering

Published:2019-09-30 Issue:20 Volume:6 Page:1901528
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Mittmann Terence,Materano Monica,Lomenzo Patrick D.,Park Min Hyuk,Stolichnov Igor,Cavalieri Matteo,Zhou Chuanzhen,Chung Ching‐Chang,Jones Jacob L.,Szyjka Thomas,Müller Martina,Kersch Alfred,Mikolajick Thomas,Schroeder Uwe

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.201901528

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simultaneously-doping of HfO2 thin films by Ni with sputtering technique and effect of post annealing on structural and electrical properties;Physica B: Condensed Matter;2023-09

2. Doped and undoped ferroelectric HfO2: Role of Gd-doping in stabilizing the ferroelectric phase;Applied Physics Letters;2023-07-17

3. 5.1 Å EOT and low leakage TiN/Al2O3/Hf0.5Zr0.5O2/Al2O3/TiN heterostructure for DRAM capacitor;Applied Physics Letters;2023-05-09

4. Structural Polymorphism Kinetics Promoted by Charged Oxygen Vacancies in HfO2;Physical Review Letters;2023-02-27

5. Polarization switching dynamics simulation by using the practical distribution of ferroelectric properties;Applied Physics Letters;2023-01-02

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