Polarization switching dynamics simulation by using the practical distribution of ferroelectric properties

Abstract

We investigated the internal bias field and coercive field in a typical ferroelectric thin-film capacitor and simulated polarization switching dynamics using Euler's method. The simulation results agreed well with the experimental results and reflected the well-known polarization domain switching model in which the polarization switching occurs on the order of nucleation, growth, and coalescence. The fit parameters (damping parameters affecting the polarization change rate) also followed a certain distribution. When the expected value was used instead of full distribution, the simulation results did not agree well with corresponding experimental results. The simulation results suggested no domain structure in the polarization switching dynamics, indicating that the polarization domain structure was affected by the distribution of the fit parameters. Our results demonstrate the possibility of simulation using realistic distribution of ferroelectric properties.