Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors-Reference-Cited by-同舟云学术

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

Published:2016-05-06 Issue:25 Volume:26 Page:4601-4612
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Pešić Milan¹,Fengler Franz Paul Gustav¹,Larcher Luca²,Padovani Andrea²,Schenk Tony¹,Grimley Everett D.³,Sang Xiahan³,LeBeau James M.³,Slesazeck Stefan¹,Schroeder Uwe¹,Mikolajick Thomas¹

Affiliation:

1. NaMLab gGmbH/TU Dresden; Noethnitzer Str. 64 Dresden D-01187 Germany

2. DISMI; Università di Modena e Reggio Emilia; Via Amendola 2 42122 Reggio Emilia Italy

3. Department of Materials Science and Engineering; North Carolina State University; Raleigh NC 27695-7907 USA

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference53 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Impact of different dopants on the switching properties of ferroelectric hafniumoxide

3. Ferroelectricity in Simple Binary ZrO2 and HfO2

4. Ferroelectricity in undoped hafnium oxide

5. A new solid state memory resistor

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