Complete suppression of the transient enhanced diffusion of B implanted in preamorphized Si by interstitial trapping in a spatially separated C-rich layer-Reference-Cited by-同舟云学术

Complete suppression of the transient enhanced diffusion of B implanted in preamorphized Si by interstitial trapping in a spatially separated C-rich layer

Published:2001-12-17 Issue:25 Volume:79 Page:4145-4147
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Napolitani E.,Coati A.,De Salvador D.,Carnera A.,Mirabella S.,Scalese S.,Priolo F.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1425458

Reference12 articles.

1. Atomic transport properties and electrical activation of ultra-low energy implanted boron in crystalline silicon

2. Microscopical aspects of boron diffusion in ultralow energy implanted silicon

3. Influence of dislocation loops created by amorphizing implants on point defect and boron diffusion in silicon

4. Diffusion of ion implanted boron in preamorphized silicon

5. Correlation of end-of-range damage evolution and transient enhanced diffusion of boron in regrown silicon

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