Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4793507
Reference32 articles.
1. Structural relaxation and defect annihilation in pure amorphous silicon
2. Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates
3. Shallow junction formation by preamorphization with tin implantation
4. Complete suppression of the transient enhanced diffusion of B implanted in preamorphized Si by interstitial trapping in a spatially separated C-rich layer
5. Effect of Si and He implantation in the formation of ultra shallow junctions in Si
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2. Effect of La doping on the structural, optical and electrical properties of spray pyrolytically deposited CdO thin films;Journal of Alloys and Compounds;2017-06
3. Study of Direct Lithiation of Thin Si Membranes with Spatially-Correlative Low Energy Focused Li Ion Beam and Analytical Electron Microscopy Techniques;Microscopy and Microanalysis;2016-07
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