Atomic transport properties and electrical activation of ultra-low energy implanted boron in crystalline silicon-Reference-Cited by-同舟云学术

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Atomic transport properties and electrical activation of ultra-low energy implanted boron in crystalline silicon

Published:1999-04 Issue:1 Volume:2 Page:35-44
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Privitera V,Napolitani E,Priolo F,Moffatt S,La Magna A,Mannino G,Carnera A,Picariello A

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference22 articles.

1. National Technology Roadmap for Semiconductors,1995

2. Enhanced ‘‘tail’’ diffusion of phosphorus and boron in silicon: Self‐interstitial phenomena

3. Transient enhanced diffusion during rapid thermal annealing of boron implanted silicon

4. Damage, defects and diffusion from ultra-low energy (0–5 keV) ion implantation of silicon

5. The role of the surface in transient enhanced diffusion

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1. Defective Solid-Phase Epitaxial Growth of Si;Semiconductors and Semimetals;2015

2. Ion Implantation Defects and Shallow Junctions in Si and Ge;Semiconductors and Semimetals;2015

3. Diffusion modelling of low-energy ion-implanted BF2 in crystalline silicon: Study of fluorine vacancy effect on boron diffusion;Materials Science and Engineering: B;2008-12

4. An investigation on the modeling of boron-enhanced diffusion of ultralow energy implanted boron in silicon;Materials Science and Engineering: B;2005-12

5. Diffusion models of BF2+ and B+ implanted at low-energy in crystalline silicon;Materials Science and Engineering: B;2004-12

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