Ion Implantation Defects and Shallow Junctions in Si and Ge
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Elsevier
Reference111 articles.
1. Kinetics of large B clusters in crystalline and preamorphized silicon;Aboy;J. Appl. Phys.,2011
2. Defects production and annealing in self-implanted Si;Bai;J. Appl. Phys.,1991
3. High-resolution X-ray diffraction by end of range defects in self-amorphized Ge;Bisognin;Mater. Sci. Eng. B,2008
4. Evidences of an intermediate rodlike defect during the transformation of {113} defects into dislocation loops;Boninelli;Appl. Phys. Lett.,2006
5. Evolution of boron-interstitial clusters in crystalline Si studied by transmission electron microscopy;Boninelli;Appl. Phys. Lett.,2007
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