Correlation of end-of-range damage evolution and transient enhanced diffusion of boron in regrown silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125475
Reference11 articles.
1. Characterization of lattice damage in ion implanted silicon by multiple crystal x-ray diffraction
2. A systematic analysis of defects in ion-implanted silicon
3. Point defects and dopant diffusion in silicon
4. Transient enhanced diffusion of dopants in silicon induced by implantation damage
5. The effect of dose rate on interstitial release from the end-of-range implant damage region in silicon
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1. Formation of dislocation loops in silicon by ion irradiation for silicon light emitting diodes;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-05
2. He implantation to control B diffusion in crystalline and preamorphized Si;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008
3. Spectroscopic Ellipsometry as a Tool for Damage Profiling in Very Shallow Implanted Silicon;Plasma Processes and Polymers;2006-02-17
4. Engineering of boron-induced dislocation loops for efficient room-temperature silicon light-emitting diodes;Journal of Applied Physics;2005-04
5. Ion-beam-induced amorphization and recrystallization in silicon;Journal of Applied Physics;2004-12
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