Impurity band conduction in Si-doped β-Ga2O3 films
Author:
Affiliation:
1. Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, USA
2. Department of Electrical and Computer Engineering, The University of Utah, Salt Lake City, Utah 84112, USA
Funder
National Science Foundation
Air Force Office of Scientific Research
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/am-pdf/10.1063/5.0031481
Reference34 articles.
1. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3
2. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
3. MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties
4. Recent progress in Ga2O3power devices
5. Recent progress on the electronic structure, defect, and doping properties of Ga2O3
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