Performance enhancement of solar-blind UV photodetector by doping silicon in β-Ga2O3 thin films prepared using radio frequency magnetron sputtering-Reference-Cited by-同舟云学术

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Performance enhancement of solar-blind UV photodetector by doping silicon in β-Ga2O3 thin films prepared using radio frequency magnetron sputtering

Published:2024-09 Issue: Volume:227 Page:113399
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Zhang Yingnan,Zhang Min^ORCID,Hu Wenbo,Hou Liyan,Jiang Shan,Wang Yuxin,Sun Jingchang

Publisher

Elsevier BV

Reference55 articles.

1. Deep ultraviolet–visible highly responsivity self-powered photodetector based on β-Ga2O3/GaN heterostructure;Varshney;Vacuum,2023

2. High-performance ε-Ga2O3 solar-blind ultraviolet photodetectors on Si (100) substrate with molybdenum buffer layer;Hu;Vacuum,2023

3. Growth rate control and phase diagram of wafer-scale Ga2O3 films by MOCVD;Xia;Vacuum,2023

4. Growth and characterization of Si-doped β-Ga2O3 films by pulsed laser deposition;Xu;Opt. Mater.,2020

5. Ultra-wide bandgap semiconductor of β-Ga2O3 and its research progress of deep ultraviolet transparent electrode and solar-blind photodetector;Guo;Acta Phys. Sin.,2019

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. First-principle calculations of the electronic structure and optical properties of β-Ga2O3 with various vacancy defects;Vacuum;2024-11

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