Bandgap Tunable ZnGaO Thin Films Grown by Atomic Layer Deposition for High-Performance Ultraviolet Photodetection-Reference-Cited by-同舟云学术

Bandgap Tunable ZnGaO Thin Films Grown by Atomic Layer Deposition for High-Performance Ultraviolet Photodetection

Published:2023-09-25 Issue:11 Volume:5 Page:2852-2861
ISSN:2639-4979
Container-title:ACS Materials Letters
language:en
Short-container-title:ACS Materials Lett.

Author:

Chen Yu-Chang¹,Zeng Guang¹,Ding Si-Tong¹,Shi Cai-Yu¹,Zhao Xue-Feng¹,Zhang David Wei¹,Lu Hong-Liang¹²^ORCID

Affiliation:

1. State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China

2. Jiashan Fudan Institute, Jiaxing, Zhejiang Province 314100, China

Funder

National Key Research and Development Program of China

Scientific and Innovative Action Plan of Shanghai

National Natural Science Foundation of China

Key Research and Development Projects of Shaanxi Province

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Biomedical Engineering,General Chemical Engineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acsmaterialslett.3c00559

Reference56 articles.

1. Amorphous Gallium Oxide‐Based Gate‐Tunable High‐Performance Thin Film Phototransistor for Solar‐Blind Imaging

2. Review of gallium-oxide-based solar-blind ultraviolet photodetectors

3. Atomic Layer Deposition of Ga2O3/ZnO Composite Films for High-Performance Forming-Free Resistive Switching Memory

4. Recent progress on the electronic structure, defect, and doping properties of Ga2O3

5. Ultrahigh Performance of Self-Powered β-Ga2O3 Thin Film Solar-Blind Photodetector Grown on Cost-Effective Si Substrate Using High-Temperature Seed Layer

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