Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures-Reference-Cited by-同舟云学术

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Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures

Published:2018-10-23 Issue:1 Volume:13 Page:
ISSN:1931-7573
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Tan Shuxin,Zhang Jicai,Egawa Takashi,Chen Gang,Luo Xiangdong,Sun Ling,Zhu Youhua

Funder

National Natural Science Foundation of China

Beijing Municipal Natural Science Foundation

Research project of Beijing University of Chemical Technology

Natural Science Foundation of Nantong University

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/s11671-018-2756-2.pdf

Reference22 articles.

1. Jiang K, Sun X, Ben J, Jia Y, Liu H, Wang Y, Wu Y, Kai C, Li D (2018) The defect evolution in homoepitaxial AlN layers grown by high-temperature metal–organic chemical vapor deposition. CrystEngComm 20:2720–2728

2. Sun M, Zhang J, Huang J, Li X, Wang L, Liu X, Wang J, Xu K (2016) Influence of thickness on strain state and surface morphology of AlN grown by HVPE. J Semicond 37(12):123001

3. Miyake H, Lin C-H, Tokoro K, Hiramatsu K (2016) Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing. J Cryst Growth 456:155–159

4. Kim H, Yoon HJ, Choi BJ (2018) Thickness dependence on interfacial and electrical properties in atomic layer deposited AlN on c-plane GaN. Nanoscale Res Lett 13:232

5. Hirayama H, Maeda N, Fujikawa S, Toyoda S, Kamata N (2014) Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes. Jap J Appl Phys 53:100209

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