Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN
Author:
Funder
Ministry of Education
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Link
http://link.springer.com/content/pdf/10.1186/s11671-018-2645-8.pdf
Reference60 articles.
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2. Hardy M, Feezell D, DenBaars S, Nakamura S (2011) Group III-nitride lasers: a materials perspective. Mater Today 14:408–415.
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