Barrier height enhancement of Ni/GaN Schottky diode using Ru based passivation scheme
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4870624
Reference23 articles.
1. Photoemission study of sulfur and oxygen adsorption on GaN()
2. Surface States and Rectification at a Metal Semi-Conductor Contact
3. Theory ofGaN(101¯0)and (112¯0) surfaces
4. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
5. Passivation of Surface and Interface States in AlGaN/GaN HEMT Structures by Annealing
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